By Krooswyk, Steven; Ou, Jeffrey; Zhang, Hanqiao
High velocity electronic Design discusses the main elements to contemplate in designing a excessive velocity electronic procedure and the way layout innovations impact the performance of the procedure as a complete. it is going to assist you comprehend why indications act so otherwise on a excessive velocity electronic approach, establish a number of the difficulties which can happen within the layout, and study suggestions to lessen their effect and tackle their root reasons. The authors supply a powerful origin to help you get excessive pace electronic procedure designs correct the 1st time.
Taking a structures layout process, High pace electronic Design deals a development from basic to complex strategies, beginning with transmission line conception, protecting center options in addition to contemporary advancements. It then covers the demanding situations of sign and tool integrity, deals directions for channel modeling, and optimizing hyperlink circuits. Tying jointly options offered through the e-book, the authors current Intel processors and chipsets as real-world layout examples.
- Provides wisdom and tips within the layout of excessive pace electronic circuits
- Explores the newest advancements in method design
- Covers every little thing that contains a profitable published circuit board (PCB) product
- Offers perception from Intel insiders approximately real-world excessive velocity electronic design
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Additional resources for High speed digital design : design of high speed interconnects and signaling
This section gives an example of how a channel amplifies the input jitter. The simulation and analysis are similar to those of F. Rao and S. 25 12 24 10 18 ps ps ps ps ps PP @ 10212 PP PP @ 10212 PP PP details. In this example, a channel with an insertion loss of 20 dB at 5 GHz and return loss greater than 225 dB is used, similar channel characteristics as in current server platforms using Intel processors. Definitions of insertion loss and return loss will be discussed in later sections of this chapter.
The reflection is the result of an impedance discontinuity when transitioning between transmission lines or structures of different impedance. Return loss is a metric to describe how the impedance is matched between transmission lines and devices or systems. 21) where Pr is reflected power and Pi is the incident power. Frequency domain analysis of S11 from an S-parameter is commonly labeled return loss, though S11 is actually the magnitude of the reflection coefficient (S11 5 |Γ|). 21 for a 10-inch transmission line.
SWE can be realized by using periodically alternating characteristic impedance transmission line sections. To improve the loss induced by impedance discontinuity, cross-tie periodic structures and inhomogeneously doped semiconductor structures have been explored [10,11]. However, these structures are not fabrication friendly. CPW structure has both ground and signal strips on the same plane, which makes changing L and C relatively easy compared with other structures. As a result, it is a good candidate for SWE design.