By Shun Lien Chuang
Emphasizes the idea of semiconductor optoelectronic units, demonstrating comparisons among theoretical and experimental effects. provides such very important subject matters as semiconductor heterojunctions and band constitution calculations close to the band edges for bulk and quantum-well semiconductors. info semiconductor lasers together with double-heterostructure, stripe-geometry gain-guided semiconductor, allotted suggestions and surface-emitting. Systematically investigates high-speed modulation of semiconductor lasers utilizing linear and nonlinear profits. beneficial properties new matters comparable to the theories at the band constructions of strained semiconductors and strained quantum-well lasers. Covers key parts at the back of the operation of semiconductor lasers, modulators and photodetectors. An Instructor's guide providing precise recommendations to the entire difficulties within the e-book is offered from the Wiley editorial division
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Extra resources for Physics of Optoelectronic Devices (Wiley Series in Pure and Applied Optics)
JuN~~IONS linear functions in the depletion region and zero outside. The boundary condition states that the normal displacement vector D = EE is continuous at x = 0: The electrostatic potential distribution 4 ( x ) across the junction is related to the electric field by which means that the slope of the potential profile is given by the negative of the electric field profile. ) . == h. <. - F,\S'C SEMlCOr~DUC'TOriELECTRONICS 52 Here V, is the total potential drop across the junction, whereas Vo, is the portion of the voltage drop on the p side and VoN is the portion of the voltage drop on the N side.
MS66, SPIE Optical Engineering Press, Bellingham, WA, 1992. 53. M. 0. elength Irzfrared Detectors, Artech House, Boston, MA 1993. ~ o n l i n & r Optics 54. N. Bioembergen, No~zlittear Optics, Addison-Wesley, Redwood City, CA 1992. A. , 1965). 55. R. W. Boyd, Nonlinear Optics, Academic, San Diego, 1992. 56. A. C. Newell and J. V. Moloney, Novllinenr Optics, Addison-Wesley, Redwood City, CA 1992. 57. Y. R. Shen, The Pi-itrclples of Norzlirlear Optics, Wiley, New York, 1984. 58. H. M. ': Academic, San Diego, 1985.
9a or in the inti-insic region in Fig. 18) 7 , I Here G,(y) is given by the optical intensity in Fig. 9a or, in the case of electric injection with a current density J o from the stripe S, Fig. 2 . 6 x 10-I" C, and d is the thickness of the active region. T h e .. solution to Eq. 16) is where L, = (D,,T,)'/' is the electron diffusion length. From the symmetry of the problem, we know that 6 r z ( y ) must be an eb'en function of y. Therefore, the coefficients A ancl B must be ecli;al. Another way to look at this is that the y cornponeni of thc electron c u r r e n t hensity J,,(y) must be zero ;it the symnletry plane 1) = 0.