
By Harold J. Hovel (Eds.)
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Example text
CONSTANT ELECTRIC FIELDS Losses due t o s u r f a c e and bulk recombination can be reduced by decreasing t h e j u n c t i o n depth and s u r f a c e recombination v e l o c i t y and by i n c r e a s i n g t h e minority carrier d i f f u s i o n l e n g t h , p a r t i c u l a r l y i n t h e base. Another way t h a t l o s s e s can be reduced is t o provide electric f i e l d s i n one o r both regions of t h e c e l l t o aid i n moving photogenerated carriers toward t h e junction. ( I n t h e o r y , d i f f u s i o n processes provide electric f i e l d s a u t o m a t i c a l l y by e s t a b l i s h i n g concent r a t i o n g r a d i e n t s of donors o r a c c e p t o r s .
Device parameters of Table 5 . of t h e junction much more important than i n s i l i c o n , and t h e base of t h e c e l l correspondingly less important. High values of f r o n t s u r f a c e recombination v e l o c i t y and low values of l i f e t i m e and d i f f u s i o n length i n t h e t o p region cause a s t r o n g decrease i n t h e s p e c t r a l response with i n c r e a s i n g photon energy as c a r r i e r s are generated c l o s e r and c l o s e r t o t h e surface. These high s u r f a c e l o s s e s can be p a r t l y overcome by making t h e junction depth small, a s i n S i cells, o r by e s t a b l i s h i n g an a i d i n g electric f i e l d a t t h e surface.
I n t h e t h i r d model, t h e base is divided i n t o two s e c t i o n s w i t h d i s t i n c t l y d i f f e r e n t p r o p e r t i e s . This a p p l i e s , f o r example, t o t h e "back surface f i e l d " c e l l [5] where a p+ region i s d i f fused i n t o t h e back of t h e p-type base t o enhance both t h e s h o r t c i r c u i t current and open c i r c u i t voltage of t h e c e l l . B. PHOTOCURRENT DERIVATION FOR MONOCHROMATIC LIGHT 17 I n t h o s e i n s t a n c e s where a ”dead l a y e r ” i s believed t o e x i s t a d j a c e n t t o t h e s u r f a c e of t h e device due t o stress introduced by t h e junction d i f f u s i o n , t h e n-type d i f f u s e d t o p region of t h e c e l l can a l s o be divided i n t o two s e c t i o n s with d i f f e r e n t l i f e t i m e s and m o b i l i t i e s .