Download Wide Band Gap Semiconductor Nanowires for Optical Devices by Vincent Consonni PDF

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By Vincent Consonni

This ebook, the second one of 2 volumes, describes heterostructures and optoelectronic units made of GaN and ZnO nanowires.

over the past decade, the variety of guides on GaN and ZnO nanowires has grown exponentially, specifically for his or her strength optical purposes in LEDs, lasers, UV detectors or sunlight cells. to date, such purposes are nonetheless of their infancy, which we study as being typically as a result of a scarcity of knowing and keep watch over of the expansion of nanowires and similar heterostructures. in addition, facing assorted yet comparable semiconductors equivalent to ZnO and GaN, but additionally with diversified chemical and actual synthesis equipment, will convey priceless comparisons as a way to achieve a basic process for the expansion of large band hole nanowires utilized to optical units

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Application examples In the preceding sections, it was shown that in spite of the high application potential of III-N NWs in general and AlGaN/GaN NWHs in particular, most of the results obtained so far refer to the investigation of basic properties and do not directly address device applications. In this section, we discuss two possible application examples of both types of AlGaN/GaN NWHs that have recently been reported. Besides this, applications of NWHs as LEDs, lasers and UV photodetectors are addressed in Chapters 5–8.

15, the large active area between core and shell as well as the non-polar surface of the NW core are often put forward [MAN 13]. In order to realize core–shell structures that show quantum confinement, the insertion of a QW between the inner NW core and the outer NW shell has to be achieved. Thus, for optoelectronic applications, InGaN/GaN core–shell NWHs are a topic of intense research [MAN 13] and are discussed in detail in Chapter 2. 13. a) Schematic illustrations of a single NW-based device with metal contacts on an oxidized Si substrate.

68 transition energy (eV) intensity (arb. 10. 16) and of two isolated NWHs from the same sample. The green (bottom) line corresponds to the spectrum of an NW with the same heterostructure parameters but containing a single ND. 25 nm (circles). Open symbols represent calculations performed for single-ML fluctuations in ND No. 5. The gray regions correspond to the dispersion of the ND-related emission in the PL spectra. zip The first μ-PL analysis of single GaN NDs in AlN/GaN NWHs even facilitated the identification of biexciton transitions as reported by Renard et al.

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